Analytical breakdown voltage model for a partial SOI-LDMOS transistor with a buried oxide step structure
نویسندگان
چکیده
We have developed a simple physics-based two-dimensional analytical off-state breakdown voltage model of partial buried oxide step structure (PBOSS) silicon-on-insulator laterally diffused metal semiconductor (SOI-LDMOS) transistor. The includes the expressions surface potential and electric field distributions in drift region by solving 2D Poisson equation. at Si–SiO2 is modulated additional peaks due to presence PBOSS structure. uniformly distributed results improved voltage. Further, analytically obtained means critical concept, determine characteristics. reveals impact device design parameters such as thickness length structure, doping, on proposed verified ATLAS simulations. will be useful high-voltage SOI-LDMOS transistors for power switching applications.
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ژورنال
عنوان ژورنال: Journal of Computational Electronics
سال: 2021
ISSN: ['1572-8137', '1569-8025']
DOI: https://doi.org/10.1007/s10825-021-01756-x